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  • DDR5 SDRAM

    Advantages of Migrating to DDR5

    DDR5 is the next evolution in DRAM, bringing a robust list of new features geared to increase reliability, availability, and serviceability (RAS); reduce power; and dramatically improve performance. Some of the key feature differences between DDR4 and DDR5 are as follows:

    Feature/Option DDR4 DDR5 DDR5 Advantage
     Data rates  1600-3200 MT/s  3200-6400 MT/s  Increases performance and bandwidth
     VDD/VDDQ/VPP   1.2/1.2/2.5   1.1/1.1/1.8   Lowers power
     Internal VREF  VREFDQ  VREFDQ, VREFCA, VREFCS   Improves voltage margins, reduces BOM costs
     Device densities    2Gb-16Gb    8Gb-64Gb    Enables larger monolithic devices 
     Prefetch    8n   16n    Keeps the internal core clock low
     DQ receiver equalization   CTLE  DFE  Improves opening of the received DQ data
     eyes inside the DRAM
     Duty cycle adjustment (DCA)   None   DQS and DQ  Improves signaling on the transmitted DQ/DQS pins
     Internal DQS delay
     monitoring 
     None   DQS interval oscillator   Increases robustness against environmental changes 
     On-die ECC  None  128b+8b SEC, error check and scrub   Strengthens on-chip RAS
     CRC   Write   Read/Write    Strengthens system RAS by protecting read data 
     Bank groups (BG)/banks   4 BG x 4 banks (x4/x8)
     2 BG x 4 banks (x16)
     8 BG x 2 banks (8Gb x4/x8)
     4 BG x 2 banks (8Gb x16)
     8 BG x 4 banks (16-64Gb x4/x8)
     4 BG x 4 banks (16-64Gb x16) 
     Improves bandwidth/performance
     Command/address interface   ODT, CKE, ACT, RAS,
     CAS, WE, A<X:0>
     CA<13:0> 

     Dramatically reduces the CA pin count

     ODT  DQ, DQS, DM/DBI   DQ, DQS, DM, CA bus    Improves signal integrity, reduces  BOM costs 
     Burst length  BL8 (and BL4)   BL16, BL32
     (and BC8 OTF, BL32 OTF) 
     Allows 64B cache line fetch with only 1 DIMM subchannel. 
     MIR (“mirror” pin)   None  Yes  Improves DIMM signaling
     Bus inversion   Data bus inversion (DBI)  Command/address inversion (CAI)   Reduces VDDQ noise on modules
     CA training, CS training   None   CA training, CS training   Improves timing margin on CA and CS pins  
     Write leveling training modes   Yes  Improved  Compensates for unmatched DQ-DQS path
     Read training patterns   Possible with the MPR  Dedicated MRs for serial
     (userdefined), clock and LFSR
     -generated training patterns
     Makes read timing margin more robust
     Mode registers  7 x 17 bits  Up to 256 x 8 bits
     (LPDDR type read/write) 
     Provides room to expand
     PRECHARGE commands   All bank and per bank  All bank, per bank, and same bank   PREsb enables precharging-specific bank in each BG
     REFRESH commands   All bank   All bank and same bank  REFsb enables refreshing of specific bank in each BG
     Loopback mode  None   Yes  Enables testing of the DQ and DQS signaling 

    Featured Resources

    DDR5 SDRAM: New Features

    Get more detail about DDR5's improved performance, RAS and ease of implementation and see how it can help you meet the stringent requirements of next-generation systems and improve your total cost of ownership.

    DDR5: The Next Step in System Level Performance: Part II

    In this follow-up blog, I discuss, in a little more detail, some of the features on DDR5 that allow performance gains and scaling capability.

    DDR5: The next step in system level performance

    As CPU core counts continue to increase, bandwidth per core cannot continue to scale with DDR4. New memory architectures are required to meet next-generation bandwidth per core requirements in x86 CPUs. Enter DDR5.

    Micron leads the charge with DDR5 to improve the performance baseline for tomorrows applications

    Providing products and solutions with confidence is really about getting applications to higher bandwidths faster.
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